Esd: Failure Mechanisms and Models (Hardcover)

• Category:  Books  »  Engineering & Technology  »  Electronics - Circuits - General
• Format: Hardcover   Learn more about the Hardcover format using Tower WIKI.
• Publisher: John Wiley & Sons
• Number of Pages: 416
• ISBN: 0470511370
• WAPI (Tower ID): 113364883
• Release Date: September 15, 2009
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• Tower.com Sales Rank: #318785 in Books (See Top 100 Books Bestsellers)
• #3749 in Engineering & Technology (See Top 100 Engineering & Technology Bestsellers)
• #67 in Electronics - Circuits - General (See Top 100 Electronics - Circuits - General Bestsellers)

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This book presents information on electrostatic discharge (ESD) failure mechanisms, spanning a range of technologies from early CMOS applications to future CMOS concepts. Voldman uses his wealth of experience in the field of ESD to address failure mechanisms associated with each CMOS generation, including those applicable to electrical overstress (EOS) and latchup. He also provides the processes or circuit solutions for eliminating failure defects, giving practical examples of failure mechanisms and the working applications they can effect. The book opens with an exposition of the historical trends behind ESD, including how technology scaling has affected the ESD failure mechanisms, and potential developments of the technology. The book goes on to examine different failure models and analysis tools, before applying this to CMOS technology; past, present and future developments, SOI technology, RF CMOS and RF MEMS. The final chapters of the book cover bipolar technology failures, Gallium Arsenide failure mechanisms and devices and magnetic recording failure mechanisms. Provides a comprehensive analysis of ESD failure mechanisms over a wide range of semiconductor materials, devices, circuits and applications. Sets out methods for eliminating failure mechanisms through workable circuit solutions, including practical examples of failure defects. Discusses established and contemporary technologies, as well as emerging and future trends such as RF complementary metal-oxide semiconductor (CMOS) and digital applications, carbon nanotubes (CNTs), local oxidization of silicon (LOCOS)-based CMOS, STI-based CMOS, multi-gate devices (MUGFETs) and FinFET transistors. Addresses the historical trends in ESD failure mechanisms, including how ESD failure practice is used to design and improve semiconductor chips, and how technology scaling has affected this.

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